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Product Overview
The ANOEKO 100–1020MHz 100W GaN RF Amplifier Module with built-in signal source is an ultra-wideband, high-power RF amplification solution developed for industrial RF integration and low-frequency C-UAS applications.
Covering 100–1020MHz, the module provides a broad operating range across multiple frequency segments, including 100–400MHz, 200–400MHz, 400–700MHz and 700–1020MHz. This wide frequency architecture allows system integrators to address different low-frequency RF requirements with a single amplifier platform.
Unlike ANOEKO's higher-frequency 100W products, this model is positioned around low-frequency ultra-wideband coverage. Its defining feature is not simply its 100W output, but the combination of wide spectrum coverage, integrated signal generation, high efficiency and flexible hardware configurations.
Powered by GaN technology, the module provides 100W / 50dBm output power, up to 45dB maximum gain, and approximately 50% typical amplifier efficiency.
For equipment manufacturers and system integrators looking for a Wide Bandwidth Module without adding a separate external signal-source unit, the integrated architecture provides a more streamlined RF subsystem design.
One of the key differentiators of this ANOEKO RF Amplifier Module is its built-in signal source.
Traditional RF system architectures may require separate signal-generation hardware before the RF power stage. By integrating the signal source into the module, ANOEKO provides a more compact solution for equipment designers seeking to simplify system architecture and reduce the number of external RF components.
This design makes the module particularly suitable for applications where:
Compact RF architecture is important
External signal-generation hardware needs to be reduced
Multiple low-frequency bands need to be accommodated
System-level integration needs to remain flexible
A dedicated RF Amplifier Module is required
The built-in signal source is therefore a core product characteristic rather than simply an additional feature.
The 100–1020MHz operating range is the defining technical feature of this product.
The module supports multiple sub-ranges:
100–400MHz
200–400MHz
400–700MHz
700–1020MHz
This architecture allows one RF amplification platform to cover a broad range of low-frequency system requirements rather than limiting the design to a single narrow frequency segment.
For this reason, the product can be positioned as a genuine Ultra-Wideband RF Amplifier Module and Wide Bandwidth Module, rather than another frequency-specific 100W amplifier.
The ANOEKO module delivers up to 100W / 50dBm output power with approximately 50% typical amplifier efficiency and 45dB maximum gain.
The combination of output capability and broad frequency coverage provides a practical RF power stage for professional equipment requiring high-power amplification across multiple low-frequency bands.
Compared with a conventional single-band RF amplifier, the ultra-wideband configuration gives system designers greater flexibility when developing equipment around different RF operating requirements.

ANOEKO offers two mechanical configurations to support different integration requirements.
156.5 × 64.7 × 24.5mm
Weight: 471g
The standard configuration is intended for general-purpose RF system integration.
187.1 × 64.7 × 24.5mm
Weight: 500g
The isolator-fitted configuration incorporates additional protection against reflected power and is designed for systems where antenna impedance can vary or where additional VSWR protection is required.
This two-configuration approach gives OEM and system integrators greater flexibility when selecting the appropriate mechanical and RF architecture.
Key Technical Features
| Parameter | Specification |
|---|---|
| Frequency Range | 100‑1020 MHz (sub‑ranges: 100‑400 / 200‑400 / 400‑700 / 700‑1020 MHz) |
| Output Power | 100 W (50 dBm) |
| Supply Current | ≤ 7.8 A at max power |
| Amplifier Efficiency | 50 % Typical |
| Maximum Gain | 45 dB |
| DC Input Voltage | 24‑32 V (Typical 28 V) |
| Power Supply Capacity | ≥ 9 A for CW full‑power output |
| Operating Temperature | ‑40 ℃ ~ +55 ℃ |
| Power Stability | ±1.5 dB @ ‑20 ℃ to +75 ℃ |
| Output VSWR | ≤ 2 |
| RF Output Connector | N‑Female (Customizable) |
| Enable Signal | White wire, high‑level on / low‑level off |
| Cooling Method | Base heat dissipation; forced‑air or conductive heat sink |
| Mounting | M3.0 steel screws |
All specifications above are based on the supplied ANOEKO product specification.
Not every 100W RF amplifier needs to compete on the same frequency range.
ANOEKO designed this model around a different requirement: broad low-frequency coverage in a single RF amplification platform.
Where some RF modules in the ANOEKO portfolio focus on specific high-frequency ranges, this model covers 100–1020MHz and integrates a signal source into the RF architecture.
That makes its product identity straightforward:
Ultra-wideband coverage + 100W GaN power + integrated signal source + flexible hardware configuration.
This combination provides a clear technical distinction from narrower-band RF amplifier products.
The ANOEKO 100–1020MHz module is engineered for professional RF equipment and low-frequency counter-UAS system integration.
Its broad frequency architecture is relevant to equipment designed around low-frequency drone-control and telemetry environments, as well as other industrial RF applications requiring wideband amplification.
For system developers evaluating a new anti-drone module, this product offers an alternative to building multiple separate low-frequency RF amplifier stages.
The integrated architecture can also support equipment manufacturers developing a customized anti-drone module around specific frequency, power, mechanical or interface requirements.

ANOEKO's portfolio includes both GaN-based RF solutions and LDMOS anti-drone module options.
The appropriate technology depends on the system's frequency range, power requirements, thermal architecture, mechanical constraints and overall application design.
This 100–1020MHz model is specifically based on GaN technology, giving it a distinct position within ANOEKO's RF amplifier portfolio.
For customers comparing a GaN anti-drone module with an LDMOS anti-drone module, the most important consideration should be the complete system requirement rather than power rating alone.
ANOEKO can evaluate frequency, output power, mechanical configuration and interface requirements to help OEM customers identify an appropriate RF architecture.
ANOEKO provides customization options for professional RF equipment manufacturers and system integrators.
Depending on project requirements, customization can be evaluated around:
Frequency configuration
Output power
RF interface
Mechanical dimensions
Hardware configuration
Cooling approach
System integration requirements
The RF output connector is specified as N-Female and customizable, while the module is available in standard and isolator-fitted configurations.
This makes the platform suitable as a starting point for a Customized anti-drone module or other specialized industrial RF amplifier application.
The key advantage of this model is the combination of several features within one RF platform:
100–1020MHz with multiple supported sub-ranges.
Up to 100W / 50dBm output power.
Approximately 50% typical amplifier efficiency.
Reduces the need for separate external signal-generation hardware.
Standard and isolator-fitted configurations provide additional integration flexibility.
ANOEKO supports application-specific frequency, power and interface configurations.
The 100–1020MHz model is part of ANOEKO's broader GaN RF amplifier portfolio.
For different frequency requirements, ANOEKO also offers other RF amplification platforms, including higher-frequency models and ultra-wideband solutions. The current Anti Drone RF Modules category includes products covering different power levels and frequency segments, including 200–400MHz, 2000–2700MHz, 4000–6000MHz and other configurations.
This means customers can select a product based on the actual frequency architecture required rather than forcing one RF module to cover every application.
Product: 100–1020MHz 100W GaN RF Amplifier Module
Frequency: 100–1020MHz
Output Power: 100W / 50dBm
Technology: GaN
Maximum Gain: 45dB
Typical Efficiency: 50%
Signal Source: Built-in
Hardware Options: Standard / Isolator-Fitted
Output Connector: N-Female, customizable
Power Stability: ±1.5dB
Operating Temperature: -40°C to +55°C
Primary Positioning: Ultra-Wideband RF Amplification / Industrial RF Integration / Low-Frequency C-UAS
Looking for a 100–1020MHz RF Amplifier Module, a high-power GaN RF amplifier, or a Customized anti-drone module for professional system integration?
ANOEKO provides standard and customized RF amplification solutions for equipment manufacturers and system integrators.
Contact ANOEKO with your required frequency range, output power, mechanical configuration and interface requirements to discuss an appropriate RF module architecture.